Selective InAs/GaSb strained layer superlattice etch stop layers for GaSb substrate removal

被引：5

作者：

Klein, B. ^{[1
]}

Montoya, J. ^{[1
]}

Gautam, N. ^{[1
]}

Krishna, S. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Dept Elect & Comp Engn, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2013年 / 111卷 / 02期

关键词：

III-V semiconductors;

D O I：

10.1007/s00339-012-7293-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports the use of an InAs/GaSb strained layer superlattice (SLS) as an etch stop layer for GaSb substrate removal with a BCl3/SF6 etch chemistry. Optimum chamber conditions were determined by measuring etch rates and selectivities for two types of superlattices. It was found that selectivity of GaSb over a superlattice is maximized if the reactive ion etching (RIE) chamber pressure is maximized and BCl3 is 80 % of the gas mixture. Selectivities of up to about 475 were measured. Greater selectivity was achieved with superlattices composed of thicker InAs layers.

引用

页码：671 / 674

页数：4

共 16 条

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