Lens aberration measurement and analysis using a novel pattern

被引：0

作者：

Nam, BH ^{[1
]}

Cho, BH ^{[1
]}

Park, JO ^{[1
]}

Kim, DS ^{[1
]}

Baek, SJ ^{[1
]}

Jeong, JH ^{[1
]}

Nam, BS ^{[1
]}

Hwang, YJ ^{[1
]}

Song, YJ ^{[1
]}

机构：

[1] Hyundai Elect Co Ltd, Memory R&D Div, Tech Grp 4, Process Team Hungduk Gu, Cheongju 361725, South Korea

来源：

OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷

关键词：

aberration; coma; multi-ring; field size; pattern deformation;

D O I：

10.1117/12.435665

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lens aberration of the exposure tool causes pattern deformation and position shift. As design rule shrinks, the ratio of printed feature size to applied wavelength for optical lithography is driven inexorably toward resolution limit. In this study, we devised an efficient method to evaluate lens aberration using multi-ring pattern on an attenuated phase-shift mask. Adoption of multi-ring pattern can cut down measurement time and improve measurement repeatability. These patterns are uniformly distributed through entire field in 7 by 7 matrix. Lens aberration was evaluated by multi-ring pattern array under conventional or off-axis illumination with KrF stepper of NA 0.65. Multi-ring critical dimension (CD) data was discussed together with the issue of lens aberration such as coma, astigmatism, field curvature, etc. We can apply this new measurement technique to select better lens system efficiently.

引用

页码：1290 / 1299

页数：10