High Power Solid-State DRO With Power Booster

被引：0
作者：
Shi, Tiefeng [1 ]
Li, Kaldi [1 ]
机构：
[1] Freescale Semicond Inc, NMSG, Tempe, AZ USA
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
High Power; DRO; Power Boost;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2.446GHz high power dielectric resonator oscillator (DRO) is presented, which can generate 330W CW output power at room temperature with -98dBc/Hz at 1kHz offset,-112.6dBc/Hz at 10kHz offset, and -132dBc/Hz at 1MHz offset, with a drain efficiency of 45% by using two Freescale LDMOS transistors. In contrast, the single-device LDMOS DRO without power boost can deliver 138W CW power with -111.2dBc/Hz at 10 kHz offset and 41% drain efficiency.
引用
收藏
页码：461 / 464
页数：4
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