Ferroelectric HfO2 Tunnel Junction Memory With High TER and Multi-Level Operation Featuring Metal Replacement Process

被引：98

作者：

Kobayashi, Masaharu ^{[1
]}

Tagawa, Yusaku ^{[1
]}

Mo, Fei ^{[1
]}

Saraya, Takuya ^{[1
]}

Hiramoto, Toshiro ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

Ferroelectric tunnel junction (FTJ); ferroelectric HfO2; tunneling electroresistance; ELECTRORESISTANCE;

D O I：

10.1109/JEDS.2018.2885932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated device design of HfO2-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling electroresistance (TER) ratio. Thus, metal and semiconductor electrodes are proposed. There exists a design space of ferroelectric material parameters to achieve high TER ratio under the constraint of depolarizing field. We have developed an FTJ fabrication process to realize the design. Large polarization charge and symmetric switching voltage are obtained by top metal replacement process. High TER ratio >30 and multi-level cell operation have been successfully demonstrated. Retention characteristics is promising, however, endurance characteristics should be improved for reliable operation.

引用

页码：134 / 139

页数：6

共 20 条

[1] Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure [J].