Modulated photothermal reflectance technique for measuring thermal conductivity of nano film on substrate and thermal boundary resistance

被引：16

作者：

Bu, W. F. ^{[1
]}

Tang, D. W. ^{[1
]}

Wang, Z. L. ^{[1
]}

Zheng, X. H. ^{[1
]}

Cheng, G. H. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Engn Thermophys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 7710119, Peoples R China

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 23期

基金：

中国国家自然科学基金;

关键词：

Photothermal reflectance technique; Interface thermal resistance; Simulation Annealing Algorithm; Thermal conductivity; Nano film; Silicon dioxide; Thin films; Thermal boundary resistance;

D O I：

10.1016/j.tsf.2008.04.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The thermal conductivities of thermally oxidated SiO2 films of 98 nm, 148 nm, and 322 nm in thickness on Si substrate are measured using modulated photothermal reflectance technique. In the measuring principle, the equivalent transmission-line analysis is applied to the multilayer heat conduction problem and the simulated annealing algorithm is applied in the inverse analysis for determining the thermal conductivity and thermal boundary resistance. The thermal conductivity of the nano-SiO2 film is found being less than its bulk value and thickness dependent. The thermal boundary resistance between SiO2 and Al coating is found being comparable to the thermal resistance of the SiO2 layer. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：8359 / 8362

页数：4

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