Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems

被引：202
作者：
Mantooth, H. Alan [1 ]
Glover, Michael D. [1 ]
Shepherd, Paul [1 ]
机构：
[1] Univ Arkansas, Fayetteville, AR 72701 USA
来源：
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2014年 / 2卷 / 03期
基金：
美国国家科学基金会;
关键词：
Gallium nitride (GaN); power electronics; power integrated circuits; power semiconductor devices; silicon carbide (SiC); wide bandgap semiconductors; GATE DRIVER; HIGH-VOLTAGE; SILICON; SEMICONDUCTOR; DESIGN; PERFORMANCE; DEVICES; DENSITY; MODULE; MOSFET;
D O I：
10.1109/JESTPE.2014.2313511
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current state of wide bandgap device technology is reviewed and its impact on power electronic system miniaturization for a wide variety of voltage levels is described. A synopsis of recent complementary technological developments in passives, integrated driver, and protection circuitry and electronic packaging are described, followed by an outline of the applications that stand to be impacted. A glimpse into the future based on the current technological trends is offered.
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收藏
页码：374 / 385
页数：12
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