Anodic bonding using SOI wafer for fabrication of capacitive micromachined ultrasonic transducers

In medical ultrasound imaging, mostly piezoelectric crystals are used as ultrasonic transducers. Capacitive micromachined ultrasonic transducers (CMUTs) introduced around 1994 have been shown to be a good alternative to conventional piezoelectric transducers in various aspects, such as sensitivity, transduction efficiency or bandwidth. This paper focuses on a fabrication process for CMUTs using anodic bonding of a silicon on insulator wafer on a glass wafer. The processing steps are described leading to a good control of the mechanical response of the membrane. This technology makes possible the fabrication of large membranes and can extend the frequency range of CMUTs to lower frequencies of operation. Silicon membranes having radii of 50, 70, 100 and 150 mu m and a 1.5 mu m thickness are fabricated and electromechanically characterized using an auto-balanced bridge impedance analyzer. Resonant frequencies from 0.6 to 2.3 MHz and an electromechanical coupling coefficient around 55% are reported. The effects of residual stress in the membranes and uncontrolled clamping conditions are clearly responsible for the discrepancies between experimental and theoretical values of the first resonance frequency. The residual stress in the membranes is determined to be between 90 and 110 MPa. The actual boundary conditions are between the clamped condition and the simply supported condition and can be modeled with a torsional stiffness of 2.10(-7) Nm rad(-1) in the numerical model.