Thermal performance investigation of DQW GaInNAs laser diodes

被引：3

作者：

Lim, J. J. ^{[1
]}

MacKenzie, R. ^{[1
]}

Sujecki, S. ^{[1
]}

Sadeghi, M. ^{[2
]}

Wang, S. M. ^{[2
]}

Adolfsson, G. ^{[2
]}

Wei, Y. Q. ^{[2
]}

Larsson, A. ^{[2
]}

Melanen, P. ^{[3
]}

Uusimaa, P. ^{[3
]}

George, A. A. ^{[4
]}

Smowton, P. M. ^{[4
]}

Larkins, E. C. ^{[1
]}

机构：

[1] Univ Nottingham, Nottingham NG7 2RD, England

[2] Chalmers, Photon Lab, S-41296 Gothenburg, Sweden

[3] Modulight Inc, Tampere 33720, Finland

[4] Cardiff Univ, Cardiff Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 5-6期

关键词：

simulation; GaInNAs; laser diode; self-heating; doping dependence;

D O I：

10.1007/s11082-008-9226-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we optimize the thermal performance of a double quantum well GaInNAs ridge waveguide laser using an accurate in-house 2D electro-opto-thermal laser simulator. The simulator has shown good agreement with experiments after a detailed calibration procedure. Using calibrated material parameters, we investigate the influence of the cladding doping level on the heat generation within the laser. It is found that due to the competition between Joule heating and free carrier absorption, an optimum cladding doping level exists.

引用

页码：385 / 390

页数：6

共 8 条

[1] INTRABAND RELAXATION-TIME IN QUANTUM-WELL LASERS [J].