Effects of substrate temperature on ZAO thin film prepared by DC reactive magnetron sputtering

被引：0

作者：

Lu, Feng ^{[1
]}

Xu, Chenghai ^{[2
]}

机构：

[1] Shenyang Jianzhu Univ, Sch Transportat & Mech Engn, Shenyang 110168, Peoples R China

[2] Northeastern Univ, Sch Mech Engn & Automat, Shenyang 110004, Peoples R China

来源：

MECHATRONIC SYSTEMS AND AUTOMATION SYSTEMS | 2011年 / 65卷

关键词：

ZAO films; substrate temperature; sputtering; ZNO;

D O I：

10.4028/www.scientific.net/AMM.65.376

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

The effects of substrate temperature on the resistivity and transmittance of ZAO thin films prepared by DC magnetron reactive sputtering have been investigated. The properties of the samples have been analyzed through Hall effect, X-ray diffraction and SEM. The results show that carrier concentration, Hall mobility and crystallinity of the films depend obviously on the deposition temperature. The film deposited at the range 200-250 degrees C has lower resistivity and higher transmittance.

引用

页码：376 / +

页数：2

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