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Electric-field-temperature phase diagram and the properties of AgNbO3-modified Bi0.5Na0.5TiO3
被引:3
作者:
Chen, Jing
[1
]
Li, Yang
[1
]
Teng, Pengpeng
[1
]
Wu, Lei
[2
,3
]
机构:
[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, State Key Lab Mech & Control Mech Struct, Nanjing 210016, Jiangsu, Peoples R China
[2] Nanjing Univ, Coll Engn & Appl Sci, Nanjing, Jiangsu, Peoples R China
[3] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing, Jiangsu, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Bi0.5Na0.5TiO3;
electric-field-temperature (E-T) phase diagram;
electric field-induced strain;
lead-free piezoelectric;
LEAD-FREE;
CERAMICS;
FERROELECTRICS;
TRANSITION;
D O I:
10.1080/00150193.2017.1375295
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
For some high-performance materials, AgNbO3 (AN) is a possible doping material used to improve BNT-based ceramics and realize the measurement of their electric-field-temperature (E-T) phase diagrams. The dielectric, ferroelectric and electric field-induced strain responses of (1-x)(Bi0.5Na0.5) TiO3(BNT)-xAgNbO(3) (0 <= x <= 0.1) piezoelectric ceramics were systematically investigated in this research. A large strain of 0.225% (corresponding to a large d(33) signal of 320 pm/V) similar to that obtained in the other electric field-induced binary BNT-based ceramics was achieved with 0.05 mol AgNbO3 at room temperature. In addition, the electric-field-temperature (E-T) phase diagram for (1-x)(Bi0.5Na0.5) TiO3-xAgNbO(3) (x = 0.03) was established. The transitions between the ferroelectric, ergodic, and nonergodic relaxor states of the materials were found as a function of composition and temperature.
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页码:118 / 125
页数:8
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