Blue photoluminescent Si nanocrystals prepared by high-current pulsed electron beam irradiation

被引：3

作者：

Lv, Peng ^{[1
]}

Zhang, Zaiqiang ^{[1
]}

Wang, Xiaotong ^{[1
]}

Hou, Xiuli ^{[1
]}

Guan, Qingfeng ^{[1
]}

机构：

[1] Jiangsu Univ, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China

来源：

RSC ADVANCES | 2013年 / 3卷 / 39期

关键词：

POROUS SILICON; LIGHT EMISSION; LUMINESCENCE; SURFACE; FABRICATION; ORIGIN; OXIDE; DOTS;

D O I：

10.1039/c3ra43064b

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Si nanocrystals (Si-ncs) were prepared from n-type Si (100) wafers by using high-current pulsed electron beam irradiation in vacuum. High density (9.7 x 10(14) cm(-2)) ultrafine Si-ncs (similar to 3 nm) embedded in amorphous Si layers (similar to 60 nm) exhibit blue photoluminescence emission at room temperature which can be attributed to the quantum confinement size effect. The pulse number is a key parameter which influences the photoluminescence intensity. Possible formation mechanisms of Si-ncs are discussed.

引用

页码：17998 / 18001

页数：4

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