Study of high-dose X-ray radiation damage of silicon sensors

被引：13

作者：

Klanner, Robert ^{[1
]}

Fretwurst, Eckhart ^{[1
]}

Pintilie, Ioana ^{[2
]}

Schwandt, Joern ^{[1
]}

Zhang, Jiaguo ^{[1
]}

机构：

[1] Univ Hamburg, Hamburg, Germany

[2] Natl Inst Mat Phys, Magurele, Romania

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 732卷

关键词：

XFEL; Silicon pixel sensor; Plasma effect; X-ray radiation damage; Sensor optimization;

D O I：

10.1016/j.nima.2013.05.131

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The high intensity and high repetition rate of the European X-Ray Free Electron Laser, presently under construction in Hamburg, will require pixel sensors which can stand X-ray doses up to 1 GGy for 3 years of operation. Within the AGIPD Collaboration the Hamburg group has systematically studied X-ray damage in silicon sensors for the dose range between 1 kGy and 1 GGy using strip sensors and test structures fabricated on high-ohmic n-type silicon from four different vendors. The densities of oxide charges, interface traps and surface current as function of dose and annealing conditions have been determined. The results have been implemented in TCAD simulations, and the radiation performance of strip sensors and guard-ring structures has been simulated and compared to experimental results. Finally, with the help of detailed TCAD simulations, the layout and technological parameters of the AGIPD pixel sensor have been optimized. It is found that the optimization for silicon sensors exposed to high X-ray doses is significantly different from that for non-irradiated sensors, and that the specifications of the AGIPD sensor can be met. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：117 / 121

页数：5