Comparison of Electrical Properties of Pb0.95La0.05Zr0.54Ti0.46O3 Thin Film Capacitors Using Coplanar and Interplanar Electrode Configuration

被引:0
作者
Batra, Vaishali [1 ]
Kotru, Sushma [1 ]
机构
[1] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA
关键词
PLZT; Thin Film Capacitors; Electrode Configuration; Coplanar; Interplanar; Electrical Properties; Photovoltaic Parameters; PHOTOCURRENT; POLARIZATION; IMPRINT;
D O I
10.1166/jnn.2019.16930
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Metal/ferroelectric/metal capacitors were fabricated using ferroelectric thin films of Pb0.95La0.05Zr0.54Ti0.46O3 center dot Pb0.95La0.05Zr0.54Ti0.46O3 films were deposited on Pt/Si substrate using chemical solution deposition method and Au metal electrodes were vacuum deposited on top of these films using a shadow mask. Electrical properties of these capacitors measured in two different electrode configurations, coplanar (Au/PLZT/Au) and interplanar (Au/PLZT/Pt) showed different behavior. For coplanar electrode configuration, higher values of polarization and photovoltaic parameters were obtained under illumination. The studies suggest that both the polarization-induced electric field and interface electric field increase for coplanar configuration, which enhance the transport of photogenerated charge carriers. Electrical poling further improves the photovoltaic parameters of the capacitors, with higher values obtained from the coplanar electrode configuration. Thus, for ferroelectric based photovoltaics devices, coplanar electrode configuration combined with poling enhances the photovoltaic parameters.
引用
收藏
页码:5949 / 5953
页数:5
相关论文
共 33 条
  • [1] Illumination effects on the ferroelectric and photovoltaic properties of Pb0.95La0.05Zr0.54Ti0.46O3 thin film based asymmetric MFM structure
    Batra, V.
    Kotru, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2017, 122 (23)
  • [2] Annealing-induced changes in chemical bonding and surface characteristics of chemical solution deposited Pb0.95La0.05Zr0.54Ti0.46O3 thin films
    Batra, Vaishali
    Ramana, C. V.
    Kotru, Sushma
    [J]. APPLIED SURFACE SCIENCE, 2016, 379 : 191 - 198
  • [3] Optically controlled polarization in highly oriented ferroelectric thin films
    Borkar, Hitesh
    Tomar, M.
    Gupta, Vinay
    Katiyar, Ram S.
    Scott, J. F.
    Kumar, Ashok
    [J]. MATERIALS RESEARCH EXPRESS, 2017, 4 (08):
  • [4] Experimental evidence of electronic polarization in a family of photo-ferroelectrics
    Borkar, Hitesh
    Rao, Vaibhav
    Tomar, M.
    Gupta, Vinay
    Scott, J. F.
    Kumar, Ashok
    [J]. RSC ADVANCES, 2017, 7 (21) : 12842 - 12855
  • [5] Anomalous change in leakage and displacement currents after electrical poling on lead-free ferroelectric ceramics
    Borkar, Hitesh
    Tomar, M.
    Gupta, Vinay
    Scott, J. F.
    Kumar, Ashok
    [J]. APPLIED PHYSICS LETTERS, 2015, 107 (12)
  • [6] High-performance ferroelectric memory based on fully patterned tunnel junctions
    Boyn, S.
    Girod, S.
    Garcia, V.
    Fusil, S.
    Xavier, S.
    Deranlot, C.
    Yamada, H.
    Carretero, C.
    Jacquet, E.
    Bibes, M.
    Barthelemy, A.
    Grollier, J.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (05)
  • [7] Very large dielectric response of thin ferroelectric films with the dead layers
    Bratkovsky, AM
    Levanyuk, AP
    [J]. PHYSICAL REVIEW B, 2001, 63 (13):
  • [8] Ferroelectric phase transitions in films with depletion charge
    Bratkovsky, AM
    Levanyuk, AP
    [J]. PHYSICAL REVIEW B, 2000, 61 (22) : 15042 - 15050
  • [9] Physics of thin-film ferroelectric oxides
    Dawber, M
    Rabe, KM
    Scott, JF
    [J]. REVIEWS OF MODERN PHYSICS, 2005, 77 (04) : 1083 - 1130
  • [10] Bulk photovoltaic effect in noncentrosymmetric crystals
    Fridkin, VM
    [J]. CRYSTALLOGRAPHY REPORTS, 2001, 46 (04) : 654 - 658