Effect of Mn doping on structures and properties of chemical solution deposited lead zirconate titanate thick films with (100) preferential orientation

被引：15
作者：
Xin, Hong [1 ,2 ,3 ]
Ren, Wei [1 ,2 ]
Wu, Xiaoqing [1 ,2 ]
Shi, Peng [1 ,2 ]
机构：
[1] Xi An Jiao Tong Univ, Elect Mat Res Lab, Key Lab, Minist Educ, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Int Ctr Dielect Res, Xian 710049, Peoples R China
[3] Xian Univ Architecture & Technol, Sch Sci, Xian 710055, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 02期
关键词：
ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; TEMPERATURE; LA;
D O I：
10.1063/1.4812226
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Mn doped PbZr0.52Ti0.48O3 (PZT) thick films with highly (100) preferential orientation have been prepared by chemical solution deposition according to doping concentration of 0, 0.5, 1, 2, and 3 mol. %. The effect of Mn-doping on structures and electrical properties of PZT thick films has been investigated. With increasing Mn doping concentration, the dielectric constant first increases and then decreases. PZT film with 0.5 mol.% Mn doping has a maximum value of 2252 and a dielectric loss of 0.011 at 1 kHz. Mn doping below 3 mol.% could effectively reduce the leakage current density of PZT films. The mechanism of Mn doping on dielectric and ferroelectric properties of PZT thick films has been investigated and discussed. (C) 2013 AIP Publishing LLC.
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页数：5
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