MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region

被引：5
作者：
Lammert, RM
Roh, SD
Hughes, JS
Osowski, ML
Coleman, JJ
机构：
[1] Microelectronics Laboratory, University of Illinois, Urbana
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 05期
基金：
美国国家科学基金会;
关键词：
distribute Bragg reflector lasers; semiconductor lasers; wavelength division multiplexing;
D O I：
10.1109/68.588102
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step, Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 mu m, which are red-shifted from the material gain peak wavelength (lambda=1.05 mu m) by 100, 200, and 300 Angstrom, respectively. The lambda=1.06-mu m device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the lambda=1.08 mu m device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet, The lambda=1.06-, 1.07-, and 1.08-mu m device exhibits an extinction ratio of greater than or equal to 120 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.
引用
收藏
页码：566 / 568
页数：3
相关论文
共 10 条
[1]   HIGH-EXTINCTION-RATIO MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER FABRICATED BY INPLANE BANDGAP ENERGY CONTROL TECHNIQUE [J].
AOKI, M ;
TAKAHASHI, M ;
SUZUKI, M ;
SANO, H ;
UOMI, K ;
KAWANO, T ;
TAKAI, A .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (06) :580-582
[2]   CHIRP AND SYSTEM PERFORMANCE OF INTEGRATED LASER MODULATORS [J].
FELLS, JAJ ;
GIBBON, MA ;
THOMPSON, GHB ;
WHITE, JH ;
PENTY, RV ;
WRIGHT, AP ;
SAUNDERS, RA ;
ARMISTEAD, CJ ;
KIMBER, EM .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1279-1281
[3]   GAINAS/GAINASP STRAINED-QUANTUM-WELL MONOLITHIC ELECTROABSORPTION MODULATOR AMPLIFIER BY LATERAL BANDGAP CONTROL WITH NONPLANAR SUBSTRATES [J].
KOYAMA, F ;
LIOU, KY ;
DENTAI, AG ;
RAYBON, G ;
BURRUS, CA .
ELECTRONICS LETTERS, 1993, 29 (24) :2104-2106
[4]   MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving-voltages fabricated by selective-area MOCVD [J].
Lammert, RM ;
Smith, GM ;
Hughes, JS ;
Osowski, ML ;
Jones, AM ;
Coleman, JJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (06) :797-799
[5]  
LAMMERT RM, 1997, IEEE PHOTONIC TECH L, V8, P149
[6]   MONOLITHIC INTEGRATION OF AN (AL)GAAS LASER AND AN INTRACAVITY ELECTROABSORPTION MODULATOR USING SELECTIVE PARTIAL INTERDIFFUSION [J].
OBRIEN, S ;
SHEALY, JR ;
WICKS, GW .
APPLIED PHYSICS LETTERS, 1991, 58 (13) :1363-1365
[7]   VERY SIMPLE APPROACH FOR HIGH-PERFORMANCE DFB LASER-ELECTROABSORPTION MODULATOR MONOLITHIC INTEGRATION [J].
RAMDANE, A ;
OUGAZZADEN, A ;
DEVAUX, F ;
DELORME, F ;
SCHNEIDER, M ;
LANDREAU, J .
ELECTRONICS LETTERS, 1994, 30 (23) :1980-1981
[8]   MONOLITHIC STRAINED-INGAASP MULTIPLE-QUANTUM-WELL LASERS WITH INTEGRATED ELECTROABSORPTION MODULATORS FOR ACTIVE-MODE LOCKING [J].
SATO, K ;
WAKITA, K ;
KOTAKA, I ;
KONDO, Y ;
YAMAMOTO, M ;
TAKADA, A .
APPLIED PHYSICS LETTERS, 1994, 65 (01) :1-3
[9]   Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers [J].
Smith, GM ;
Hughes, JS ;
Lammert, RM ;
Osowski, ML ;
Papen, GC ;
Verdeyen, JT ;
Coleman, JJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (04) :476-478
[10]   MONOLITHIC WAVE-GUIDE COUPLED CAVITY LASERS AND MODULATORS FABRICATED BY IMPURITY INDUCED DISORDERING [J].
THORNTON, RL ;
MOSBY, WJ ;
PAOLI, TL .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (06) :786-792
1