Defect Revelation and Evaluation of 4H Silicon Carbide by Optimized Molten KOH Etching Method

被引：15

作者：

Dong, Lin ^{[1
]}

Zheng, Liu ^{[1
]}

Liu, Xingfang ^{[1
]}

Zhang, Feng ^{[1
]}

Yan, Guoguo ^{[1
]}

Li, Xiguang ^{[2
]}

Sun, Guosheng ^{[1
,2
,3
]}

Wang, Zhanguo ^{[3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China

[2] Dongguan Tianyu Semicond Inc, Dongguan 523000, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

基金：

中国国家自然科学基金;

关键词：

4H-SiC; substrate; epilayer; defect; KOH; Na2O2; 4H-SIC EPITAXIAL LAYERS; CRYSTALS; GROWTH;

D O I：

10.4028/www.scientific.net/MSF.740-742.243

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have studied the defects on 4H-SiC substrates and epilayers by using molten KOH defect selective etching. It is found that adding Na2O2 into molten KOH at the etched temperature enables the revelation of dislocations on n(+) and semi-insulating substrates, whereas purely molten KOH is sufficient to obtain good etched pattern on p(+) substrates. Related statistical data on dislocation densities of n(+), p(+) and semi-insulating substrates are also presented. The morphological defects commonly observed on the epilayers are finally investigated and it is shown that some important structural features can be revealed by molten KOH method.

引用

页码：243 / +

页数：2

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