Two-dimensional MoSe2/graphene heterostructure thin film with wafer-scale continuity via van der Waals epitaxy

被引：4

作者：

Dai, Tian-Jun ^{[1
]}

Chen, Yu-Qing ^{[1
]}

Zhou, Zhang-Yu ^{[1
]}

Sun, Jian ^{[1
]}

Peng, Xiao-Shan ^{[1
]}

Liu, Xing-Zhao ^{[2
]}

机构：

[1] Guiyang Univ, Sch Elect & Commun Engn, Guiyang 550005, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2020年 / 755卷

关键词：

Two-dimensional; MoSe2/graphene heterostructure; Wafer-scale; Physical vapor deposition; van der Waals epitaxy; LARGE-AREA; GRAPHENE; MOS2; GROWTH; TRANSISTORS; DOMAINS;

D O I：

10.1016/j.cplett.2020.137762

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Two-dimensional MoSe2/graphene heterostructure in a wafer-scale was realized by a new method involves physical vapor deposition (PVD), in which the MoSe2 film was vertically stacked on graphene by evaporating the MoSe2 compounds using an electron gun evaporator. A preferred lattice orientation with the underlying graphene was identified by transmission electron microscopy, revealing the van der Waals epitaxy (VdWs) of MoSe2. The interface interaction between the graphene substrate and the MoSe2 epilayer was investigated via Raman spectroscopy. The growth technique provides a facile route to create large area VdWs heterostructures, which can be developed for future mass production of nano-devices.

引用

页数：5

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