Rapid defect characterization: The efficiency of diffraction contrast-scanning transmission electron microscopy

被引：1

作者：

Wang, Lingling ^{[1
]}

Shi, Ruikai ^{[1
]}

Lu, Yuan ^{[2
]}

Yu, Yi ^{[2
]}

机构：

[1] JEOL Beijing Co Ltd, Shanghai Branch, Shanghai, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

来源：

MICROSCOPY RESEARCH AND TECHNIQUE | 2020年 / 83卷 / 12期

基金：

上海市自然科学基金;

关键词：

defect; diffraction contrast; scanning transmission electron microscopy; DISLOCATIONS; STEM;

D O I：

10.1002/jemt.23556

中图分类号：

R602 [外科病理学、解剖学]; R32 [人体形态学];

学科分类号：

100101 ;

摘要：

Defect information is critical for both fundamental research and industrial analysis of metals and semiconductors. Diffraction contrast is the basis for defect imaging using either X-ray or electron microscopy. Taking the advantage of high resolution in electron microscopy techniques, here we evaluate the efficiency for diffraction contrast imaging based on scanning transmission electron microscopy. The working principle and application are demonstrated using the typical semiconductor material silicon as an example. The efficiency is improved at least an order of magnitude compared with conventional electron microscopy method.

引用

页码：1604 / 1609

页数：6

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