Modeling of a p-type resistive gas sensor in the presence of a reducing gas

被引：58
作者：
Bejaoui, A. [1 ]
Guerin, J. [1 ]
Aguir, K. [1 ]
机构：
[1] Aix Marseille Univ, CNRS IM2NP UMR7334, F-13397 Marseille 20, France
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2013年 / 181卷
关键词：
Semiconductor gas sensors; P-type; Reducing gas; Modeling; Temperature; Response; THIN-FILM; CONDUCTION; CO;
D O I：
10.1016/j.snb.2013.01.018
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The detection mechanism in gas sensors based on semiconductor materials is mainly due to charge-transfer. The interaction between the semiconductor surface and the gas is approached by the theory of chemisorption. Based on the Wolkenstein adsorption model, we propose a model simulating the reaction between the ionized oxygen species adsorbed at the surface of a p-type semiconductor with a reducing gas as a function of: (i) work temperature; (ii) oxygen pressure; (iii) gas concentration; and (iv) characteristic properties of the semiconductor/gas interaction. The influence of the main parameters of the model on sensor performance is analyzed through the response curve as a support tool for the design and optimization of suitable materials for a desired sensing application. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：340 / 347
页数：8
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