A study on molybdenum sulphoselenide (MoSxSe2-x, 0 ≤ x ≤ 2) thin films: Growth from solution and its properties

被引：20

作者：

Anand, T. Joseph Sahaya ^{[1
]}

Shariza, S. ^{[1
]}

机构：

[1] Univ Teknikal Malaysia Melaka, Fac Mfg Engn, Dept Mat Engn, Durian Tunggal 76100, Melaka, Malaysia

来源：

ELECTROCHIMICA ACTA | 2012年 / 81卷

关键词：

Molybdenum sulphoselenide; Thin films; Electrodeposition; Direct bandgap; Mott-Schottky plots; OPTICAL-PROPERTIES; DEPOSITION; SELENIDE; MOSE2; TIME;

D O I：

10.1016/j.electacta.2012.07.077

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Thin films of molybdenum sulphoselenide, MoSxSe2-x, (0 <= x <= 2) have been electrosynthesized on indium-tin-oxide (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analysed in order to determine the suitability of the thin films for photoelectrochemical (PEC)/solar cell applications. Structural analysis via X-ray diffraction (XRD) analysis reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals the films were adherent to the substrate with uniform in nature which also confirmed by Transmission electron microscope (TEM). Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Mo, S and Se elements in the films. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of n-type material. For all films, the semiconductor parameter values come in the better range of other transition metal chalcogenides which has proven that MoSSe thin films are capable as solar/PEC cell materials. (c) 2012 Elsevier Ltd. All rights reserved.

引用

页码：64 / 73

页数：10

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