HYDROGENATED AMORPHOUS SILICON CARBON NITRIDE FILMS PREPARED BY PECVD TECHNOLOGY: PROPERTIES

被引：21

作者：

Huran, Jozef ^{[1
]}

Valovic, Albin ^{[1
]}

Kucera, Michal ^{[1
]}

Kleinova, Angela ^{[2
]}

Kovacova, Eva ^{[1
]}

Bohacek, Pavol ^{[1
]}

Sekacova, Maria ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Bratislava 84104, Slovakia

[2] Slovak Acad Sci, Inst Polymer, Bratislava 84541, Slovakia

来源：

JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2012年 / 63卷 / 05期

关键词：

hydrogenated amorphous silicon carbon nitride; PECVD; THIN-FILMS; C-N; DEPOSITION;

D O I：

10.2478/v10187-012-0049-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous silicon carbon nitride films were grown by plasma enhanced chemical vapor deposition (PECVD) technique. The flow rates of SiH4, CH4 and NH3 gases were 6 sccm, 30 sccm and 8 sccm, respectively. The deposition temperatures were 350, 400 and 450 degrees C. The RBS and ERD results showed that the concentrations of Si, C, N and FT are practically the same in the films deposited at substrate temperatures in the range 350-450 degrees C. In photoluminescence spectra we identified two peaks and assigned them to radiative transitions typical for amorphous materials, ie band to band and defect-related ones. The electrical characterization consists of I(V) measurement in sandwich configuration for voltages up to 100 V. From electrical characterization, it was found that with increased deposition temperature the resistivity of the amorphous SiCN film was reduced.

引用

页码：333 / 335

页数：3

共 14 条

[1] Microstructure, mechanical properties, and wetting behavior of Si-C-N thin films grown by reactive magnetron sputtering
Berlind, T
Hellgren, N
Johansson, MP
Hultman, L
[J]. SURFACE & COATINGS TECHNOLOGY, 2001, 141 (2-3) : 145 - 155
[2] Characteristics of Si-C-N films deposited by microwave plasma CVD on Si wafers with various buffer layer materials
Chang, HL
Kuo, CT
[J]. DIAMOND AND RELATED MATERIALS, 2001, 10 (9-10) : 1910 - 1915
[3] Investigation of the electrical properties and reliability of amorphous SiCN
Chen, CW
Chang, TC
Liu, PT
Tsai, TM
Huang, HC
Chen, JM
Tseng, CH
Liu, CC
Tseng, TY
[J]. THIN SOLID FILMS, 2004, 447 : 632 - 637
[4] Effect of the deposition conditions on the morphology and bonding structure of SiCN films
Cheng, WJ
Jiang, JC
Zhang, Y
Zhu, HS
Shen, DZ
[J]. MATERIALS CHEMISTRY AND PHYSICS, 2004, 85 (2-3) : 370 - 376
[5] Deposition of silicon carbon nitride thin films by microwave ECR plasma enhanced unbalance magnetron sputtering
Gao, Peng
Xu, Jun
Piao, Yong
Ding, Wanyu
Wang, Dehe
Deng, Xinlu
Dong, Chuang
[J]. SURFACE & COATINGS TECHNOLOGY, 2007, 201 (9-11) : 5298 - 5301
[6] Ion-assisted deposition of C-N and Si-C-N films
He, ZG
Carter, G
Colligon, JS
[J]. THIN SOLID FILMS, 1996, 283 (1-2) : 90 - 96
[7] JEDREJOWSKI P., 2004, THIN SOLID FILMS, V201
[8] Investigation of light element contents in subsurface layers of silicon
Kobzev, A. P.
Huran, J.
Maczka, D.
Turek, M.
[J]. VACUUM, 2009, 83 : S124 - S126
[9] MATTHEWS A., 1998, SURF COAT TECH, V1
[10] Mayer M., 2008, SIMNRA USERS GUIDE 6

← 1 2 →