Large scale fabrication of well-aligned CdS/p-Si shell/core nanowire arrays for photodetectors using solution methods

被引：26

作者：

Jiang, Yurong ^{[1
]}

Li, Chen ^{[1
]}

Cao, Weiwei ^{[1
]}

Jiang, Yanrong ^{[1
]}

Shang, Shuying ^{[1
]}

Xia, Congxin ^{[1
]}

机构：

[1] Henan Normal Univ, Coll Phys & Elect Engn, Henan Key Lab Photovolta Mat, Xinxiang 453007, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2015年 / 17卷 / 26期

关键词：

PHOTOVOLTAIC DEVICES; QUANTUM DOTS;

D O I：

10.1039/c5cp00679a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a facile approach for the preparation of the vertically aligned, large scale CdS/p-Si shell/core nanowire heterojunction arrays based on successive ionic layer adsorption and reaction deposition. The results indicate that the rectifying characteristics of CdS/Si shell/core nanowire arrays can be tailored by changing the number of SILAR cycles, and the CdS/Si shell-core nanowire heterojunctions have good photo-sensitivity (the ratio of photocurrent to dark current could reach 14.96 at -1 V reverse bias) under AM 1.5 (1 Sun) illumination. Furthermore, the electron transport mechanism across the CdS/Si nano-heterojunctions is also discussed in detail. This reported CdS/p-Si shell/core nanowire structure offers a generic approach for the integration of new functional materials for photo-electronics applications.

引用

页码：16784 / 16790

页数：7