Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics

被引：113

作者：

Yu, Ruomeng ^{[1
]}

Dong, Lin ^{[1
,2
]}

Pan, Caofeng ^{[1
]}

Niu, Simiao ^{[1
]}

Liu, Hongfei ^{[4
]}

Liu, Wei ^{[5
]}

Chua, Soojin ^{[4
]}

Chi, Dongzhi ^{[4
]}

Wang, Zhong Lin ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Zhengzhou Univ, Sch Mat Sci & Enginnering, Zhengzhou 450001, Peoples R China

[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China

[4] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[5] Nanyang Technol Univ, Luminous Ctr Excellence Semicond Lighting & Displ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 26期

关键词：

piezotronic effects; GaN nanobelts; flexible electronics; CURRENT-VOLTAGE CHARACTERISTICS; SINGLE ZNO NANOWIRE; NANOGENERATORS; DEVICES; ARRAYS; SENSOR;

D O I：

10.1002/adma.201201020

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The transport properties of GaN nanobelts (NBs) are tuned using a piezotronic effect when a compressive/tensile strain is applied on the GaN NB. This is mainly due to a change in Schottky barrier height (SBH). A theoretical model is proposed to explain the observed phenomenon. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3532 / 3537

页数：6

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