Narrow-gap MCT as THz detector

被引：0
作者：
Sizov, F. [1 ]
Dobrovolski, V. [1 ]
Tsybrii, Z. [1 ]
Zabudsky, V. [1 ]
Dvoretskii, S. [2 ]
Mikhailov, N. [2 ]
机构：
[1] VE Lashkaryov Inst Semicond Phys, Kiev, Ukraine
[2] AV Rzhanov Inst Semicond Phys, Novosibirsk, Russia
来源：
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON) | 2016年
关键词：
MCT; THz/sub-THz narrow-gap MCT bolometer; warm-carriers effect; MILLIMETER; SEMICONDUCTOR;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Direct detection mm/sub-mm wave warm-carrier bipolar narrow-gap Hg1-xCdxTe semiconductor bolometers that can be used as sensitive elements in THz sensitive arrays, are considered. The response of Hg1-xCdxTe warm-electron bolometer was measured in v=0.037-1.54 THz frequency range at T=68-300 K. In the detector (bolometer) considered the electromagnetic wave heats electrons and holes there, creates their excess concentrations, as well as, the electromotive force. These effects cause the bolometer response voltage. The noise equivalent power can reach NEP300K similar to 2.5x10(-10) W/Hz(1/2) at radiation frequency v=140 GHz.
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页数：3
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