Effects of number of quantum wells and Shockley-Read-Hall recombination in deep-ultraviolet light-emitting diodes

被引：7

作者：

Chen, Fang-Ming ^{[1
]}

Huang, Man-Fang ^{[1
]}

Chang, Jih-Yuan ^{[2
]}

Kuo, Yen-Kuang ^{[3
]}

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Natl Changhua Univ Educ, Ctr Teacher Educ, Changhua 500, Taiwan

[3] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

OPTICS LETTERS | 2020年 / 45卷 / 13期

关键词：

SCREW DISLOCATIONS;

D O I：

10.1364/OL.397140

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Effects of the number of quantum wells (QWs) and Shockley-Read-Hall (SRH) recombination in deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated theoretically. Simulation results show that, for DUV LEDs with high crystalline quality, light output power increases with an increasing number of QWs. As for the DUV LEDs with poor crystalline quality, light output power may decrease with an increasing number of QWs due to the deteriorated SRH recombination. The injection current density is also an important factor regarding the impact of the number of QWs. When operated at low current density, for the DUV LED with poor crystalline quality, light output power may decrease with an increasing number of QWs. (C) 2020 Optical Society of America

引用

页码：3749 / 3752

页数：4

共 22 条

[1] Albrecht M, 1999, PHYS STATUS SOLIDI B, V216, P409, DOI 10.1002/(SICI)1521-3951(199911)216:1<409::AID-PSSB409>3.0.CO
[2] 2-K
[3] [Anonymous], 2015, CROSSL SOFTW
[4] High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction
Chang, Jih-Yuan
Liou, Bo-Ting
Huang, Man-Fang
Shih, Ya-Hsuan
Chen, Fang-Ming
Kuo, Yen-Kuang
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (02) : 976 - 982
[5] Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes
Chang, Jih-Yuan
Huang, Man-Fang
Chen, Fang-Ming
Liou, Bo-Ting
Shih, Ya-Hsuan
Kuo, Yen-Kuang
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (07)
[6] Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded Configuration
Chang, Jih-Yuan
Chang, Hui-Tzu
Shih, Ya-Hsuan
Chen, Fang-Ming
Huang, Man-Fang
Kuo, Yen-Kuang
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) : 4980 - 4984
[7] Improved Quantum Efficiency in Green InGaN Light-Emitting Diodes With InGaN Barriers
Chang, Jih-Yuan
Chang, Yi-An
Chen, Fang-Ming
Kuo, Yih-Ting
Kuo, Yen-Kuang
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (01) : 55 - 58
[8] Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
Cherns, D
Henley, SJ
Ponce, FA
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (18) : 2691 - 2693
[9] Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
David, Aurelien
Grundmann, Michael J.
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (10)
[10] Characterization of threading dislocations in GaN epitaxial layers
Hino, T
Tomiya, S
Miyajima, T
Yanashima, K
Hashimoto, S
Ikeda, M
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3421 - 3423

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