Enhanced emission from ZnO-based double heterostructure light-emitting devices using a distributed Bragg reflector

被引：11

作者：

Lu, Ying-Jie ^{[1
,2
]}

Shan, Chong-Xin ^{[1
]}

Jiang, Ming-Ming ^{[1
]}

Li, Bing-Hui ^{[1
]}

Liu, Ke-Wei ^{[1
]}

Li, Rui-Gang ^{[3
]}

Shen, De-Zhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R China

来源：

RSC ADVANCES | 2014年 / 4卷 / 32期

关键词：

SAPPHIRE SUBSTRATE; ELECTROLUMINESCENCE; LITHIUM; DIODES;

D O I：

10.1039/c4ra01585a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Double hetero-structured n-Mg0.13Zn0.87O/i-ZnO/p-Mg0.13Zn0.87O light-emitting devices (LEDs) have been fabricated, and the p-type Mg0.13Zn0.87O layer was obtained via a lithium-nitrogen codoping method. Obvious emission at around 400 nm has been observed from the LEDs under forward bias. To increase the light extraction from the LEDs, a distributed Bragg reflector whose reflectivity is 98% at 400 nm was bonded on the back side of the device, and the emission of the device was enhanced by around 1.6 times with the reflector.

引用

页码：16578 / 16582

页数：5

共 39 条

[1] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[2] Ultraviolet and visible photoresponse properties of a ZnO/Si heterojunction at zero bias [J].

Bai, Zhiming ;

Yan, Xiaoqin ;

Chen, Xiang ;

Cui, Yan ;

Lin, Pei ;

Shen, Yanwei ;

Zhang, Yue .

RSC ADVANCES, 2013, 3 (39) :17682-17688

[3] Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3 Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate [J].

Chen, Hongjun ;

Guo, Hao ;

Zhang, Peiyuan ;

Zhang, Xiong ;

Liu, Honggang ;

Wang, Shengkai ;

Cui, Yiping .

APPLIED PHYSICS EXPRESS, 2013, 6 (02)

[4] Effect of compressive stress on stability of N-doped p-type ZnO [J].

Chen, Xingyou ;

Zhang, Zhenzhong ;

Yao, Bin ;

Jiang, Mingming ;

Wang, Shuangpeng ;

Li, Binghui ;

Shan, Chongxin ;

Liu, Lei ;

Zhao, Dongxu ;

Shen, Dezhen .

APPLIED PHYSICS LETTERS, 2011, 99 (09)

[5] Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer [J].

Choi, Yong-Seok ;

Kang, Jang-Won ;

Kim, Byeong-Hyeok ;

Na, Dong-Keun ;

Lee, Sang-Jun ;

Park, Seong-Ju .

OPTICS EXPRESS, 2013, 21 (10) :11698-11704

[6] Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes [J].

Chu, S. ;

Lim, J. H. ;

Mandalapu, L. J. ;

Yang, Z. ;

Li, L. ;

Liu, J. L. .

APPLIED PHYSICS LETTERS, 2008, 92 (15)

[7] Electrically pumped ultraviolet ZnO diode lasers on Si [J].

Chu, Sheng ;

Olmedo, Mario ;

Yang, Zheng ;

Kong, Jieying ;

Liu, Jianlin .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

[8] Single-crystalline tower-like ZnO microrod UV lasers [J].

Dong, Hongxing ;

Liu, Yang ;

Lu, Jian ;

Chen, Zhanghai ;

Wang, Jun ;

Zhang, Long .

JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (02) :202-206

[9] High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector [J].

Guo, Hao ;

Zhang, Xiong ;

Chen, Hongjun ;

Zhang, Peiyuan ;

Liu, Honggang ;

Chang, Hudong ;

Zhao, Wei ;

Liao, Qinghua ;

Cui, Yiping .

OPTICS EXPRESS, 2013, 21 (18) :21456-21465

[10] Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient [J].

Jeong, SH ;

Kim, BS ;

Lee, BT .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2625-2627

← 1 2 3 4 →