Laser direct 3D patterning and reduction of graphene oxide film on polymer substrate

被引：36

作者：

Bobrinetskiy, I. I. ^{[1
]}

Emelianov, A. V. ^{[2
]}

Smagulova, S. A. ^{[3
]}

Komarov, I. A. ^{[2
]}

Otero, N. ^{[1
]}

Romero, P. M. ^{[1
]}

机构：

[1] ATMEN, Laser Applicat Ctr, Relva 27A, Porrino 36410, Spain

[2] Natl Res Univ Elect Technol, Bld 1,Shokin Sq, Moscow 124498, Russia

[3] MK Ammosov North Eastern Fed Univ, 58 Belinskii St, Yakutsk 677000, Russia

来源：

MATERIALS LETTERS | 2017年 / 187卷

基金：

俄罗斯科学基金会;

关键词：

Laser processing; Graphene oxide; Thin films; 3D embossing; Raman; Electrical properties; LARGE-SCALE PRODUCTION; PHOTOREDUCTION;

D O I：

10.1016/j.matlet.2016.10.073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The graphene oxide (GO) film embossing and reduction was demonstrated under femtosecond laser pulses. The best conductivity of laser reduced GO film of 200 Omega/square was achieved for fs laser pulses energy of 35-45 nJ and 10-25 pulses per mu m. We demonstrate the patterned laser reduction over the embossed GO film that holds it integrity and conductivity. Laser reduced GO properties was studied by Raman, SEM and sheet resistance measurements.

引用

页码：20 / 23

页数：4

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