Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells

被引：0

作者：

Shimizu, Kazuki ^{[1
]}

Omondi, Ateto Eric ^{[1
]}

Irikawa, Junpei ^{[1
]}

Miyajima, Shinsuke ^{[1
]}

Konagai, Makoto ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, Japan

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

minority carrier lifetime; heterojunction silicon solar cells; plasma enhanced chemical vapor deposition; CHEMICAL-VAPOR-DEPOSITION; SILICON;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We optimized an n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter by changing the plasma power density and monomethylsilane (MMS) flow rate during buffer layer deposition. Quasi-steady state photoconductance (QSSPC) method was carried out to measure the effective lifetime and implied open circuit voltage (implied-V-oc). The implied-V-oc above 0.7 V was achieved with the plasma power density of 1.6 W/cm(2) and MMS flow rate of 2.75 sccm. These result indicates that the properties of n-type nc-3C-SiC:H emitter strongly depend on the deposition condition of a-SiC:H buffer layer.

引用

页码：1253 / 1256

页数：4

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