Dynamic Nuclear Spin Polarization Induced by the Edelstein Effect at Bi(111) Surfaces

被引:4
作者
Jiang, Zijian [1 ]
Soghomonian, V [1 ]
Heremans, J. J. [1 ]
机构
[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
关键词
DER-WAALS EPITAXY; WEAK-LOCALIZATION; BISMUTH; FILMS; MAGNETORESISTANCE; RESONANCE; PARALLEL; SILICON;
D O I
10.1103/PhysRevLett.125.106802
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Nuclear spin polarization induced by hyperfine interaction and mainly the Edelstein effect due to strong spin-orbit interaction, is investigated by quantum transport in Bi(111) thin film samples. The Bi(111) films are deposited on mica by van der Waals epitaxial growth. The Bi(111) films show micrometer-sized triangular islands with 0.39 nm step height, corresponding to the Bi(111) bilayer height. At low temperatures a high current density is applied to generate a nonequilibrium carrier spin polarization by mainly the Edelstein effect at the Bi(111) surface, which then induces dynamic nuclear polarization by hyperfine interaction. Comparative quantum magnetotransport antilocalization measurements indicate a suppression of antilocalization by the in-plane Overhauser field from the nuclear polarization and allow a quantification of the Overhauser field. Hence nuclear polarization was both achieved and quantified by a purely electronic transport-based approach.
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页数:6
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