STT MRAM patterning challenges

被引：17
作者：
Boullart, Werner
Radisic, Dunja
Paraschiv, Vasile
Cornelissen, Sven
Manfrini, Mauricio
Yatsuda, Koichi
Nishimura, Eiichi
Ohishi, Tetsuya
Tahara, Shigeru
机构：
来源：
ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING II | 2013年 / 8685卷
关键词：
MAGNETIC TUNNEL-JUNCTION; ETCH CHARACTERISTICS;
D O I：
10.1117/12.2013602
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive-Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented. Plasma based etching, wet echting, but also none subtractive pattering approaches are covered. The paper also reports on the patterning strategies, currently under investigation at imec.
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页数：9
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