A fluorinated organic-silica film with extremely low dielectric constant

被引：20

作者：

Uchida, Y ^{[1
]}

Taguchi, K

Sugahara, S

Matsumura, M

机构：

[1] Teikyo Univ Sci & Technol, Uenohara, Yamanashi 4090193, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

chemical-vapor deposition; dielectric constant; alkyl-silyl iso-cyanates; fluorinated organic-silica film; inter-metal insulator;

D O I：

10.1143/JJAP.38.2368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A fluorinated organic-silica him was prepared by quasi hydrogen-free chemical-vapor deposition. The content of methyl groups and fluorine atoms incorporated in the him were as much as 43% and 9% of that of Si. The film had goad insulating characteristics with the dielectric constant, k, of as low as 2.5 even under as-prepared conditions. They were improved by vacuum annealing; ii was 2.1 and the low-field resistivity was 10(16) Ohm cm after annealing at 500 degrees C. It was confirmed that the film prepared at 200 degrees C was stable for more than 20 days in the air.

引用

页码：2368 / 2372

页数：5

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