Effective strategy for porous organosilicate to suppress oxygen ashing damage

被引：19
作者：
Liu, PT [1 ]
Chang, TC
Mor, YS
Chen, CW
Tsai, TM
Chu, CJ
Pan, FM
Sze, SM
机构：
[1] Nat Nano Device Lab, Hsinchu 300, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan
[4] Nanmat Technol Co Ltd, Kaohsiung, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2002年 / 5卷 / 03期
关键词：
D O I：
10.1149/1.1445644
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Photoresist stripping with oxygen plasma ashing destroys numerous functional groups in porous organosilicate glasses (OSGs), This impact makes the porous OSG relatively hydrophilic and causes low-k dielectric degradation, To mitigate these issues, various strategies are investigated to enhance oxygen plasma resistance of the porous OSG. These include physical and chemical procedures. Both structural and electrical analyses are used to determine their efficiency. In addition, an optimum prescription that consists of H, plasma and chemical trimethylchlorosilane treatment is developed in this work. The enhancement of oxygen plasma resistance can provide the porous OSG for practical application in the multilevel interconnection. (C) 2002 The Electrochemical Society.
引用
收藏
页码：G11 / G14
页数：4
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