Effect of Non-Uniform Substrate Doping Profile on The Electrical Performance of Through-Silicon-Via for Low Power Application

被引：0
|
作者：
Salah, Khaled [1 ]
El Rouby, Alaa [1 ]
Ragai, Hani [2 ]
Ismail, Yehea [3 ]
机构：
[1] Mentor Graph Corp, Cairo, Egypt
[2] Ain Shams Univ, Cairo, Egypt
[3] AUC Univ, Cairo, Egypt
来源：
2012 INTERNATIONAL CONFERENCE ON ENERGY AWARE COMPUTING | 2012年
关键词：
Three-Dimensional ICs; Through Silicon Via; TSV; Doping; Lumped Model; INTEGRATED-CIRCUITS; NOISE;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The effects of substrate doping density on the electrical performance of a TSV are investigated in this paper. The previously introduced lumped circuit model for TSV structure is used for a lightly-doped silicon structure. A new lumped circuit model based on the field distribution in a heavily-doped silicon substrate is proposed and its physical understanding is explained. Both circuit models for the lightly-doped and heavily-doped cases are validated using full-wave simulations up to 10 GHz.
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页数：4
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