Damage-free polishing of monocrystalline silicon wafers without chemical additives

被引：31

作者：

Biddut, A. Q. ^{[1
]}

Zhang, L. C. ^{[1
]}

Ali, Y. M. ^{[1
]}

Liu, Z. ^{[2
]}

机构：

[1] Univ Sydney, Sch Aerospace Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[2] Univ Sydney, Elect Microscope Unit, Sydney, NSW 2006, Australia

来源：

SCRIPTA MATERIALIA | 2008年 / 59卷 / 11期

基金：

澳大利亚研究理事会;

关键词：

Silicon; Damage-free; Polishing; Chemicals; Stress;

D O I：

10.1016/j.scriptamat.2008.08.002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This investigation explores the possibility and identifies the mechanism of damage-free polishing of monocrystalline silicon without chemical additives. Using high resolution electron microscopy and contact mechanics, the study concludes that a damage-free polishing process without chemicals is feasible. All forms of damages, such as amorphous Si, dislocations and plane shifting, can be eliminated by avoiding the initiation of the beta-tin phase of silicon during polishing. When using 50 nm abrasives, the nominal pressure to achieve damage-free polishing is 20 kPa. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1178 / 1181

页数：4

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