Surface-layer damage and responsivity in sputtered-ITO/p-GaN Schottky-barrier photodiodes

被引:6
作者
Pulfrey, DL
Parish, G
Wee, D
Nener, BD
机构
[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Crawley, WA 6009, Australia
基金
澳大利亚研究理事会;
关键词
p-GaN; Schottky barrier; photodiodes; minority carrier diffusion length;
D O I
10.1016/j.sse.2005.09.013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
It is postulated that donor-like nitrogen vacancies, caused by the sputtering of a Schottky-barrier metal onto p-type gallium nitride, diffuse into the GaN and form a surface layer in which both the minority-carrier lifetime and mobility are drastically reduced. Such a damaged surface layer is shown to reduce the responsivity of p-GaN Schottky-barrier photodiodes, thereby offering an explanation for the responsivity values in the range of 0.03-0.04 A/W that have been measured in experimental ITO/p-GaN devices. On making allowance for the damaged surface layer, an electron diffusion length of around 300 nm can be inferred for the undamaged p-GaN region. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1969 / 1973
页数:5
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