High-program/erase-speed SONOS with in situ silicon nanocrystals

被引：19

作者：

Chiang, Tsung-Yu ^{[1
]}

Chao, Tien-Sheng ^{[1
]}

Wu, Yi-Hong ^{[2
]}

Yang, Wen-Luh ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Taichung 407, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

memory window; nonvolatile memory; retention time; silicon nanocrystals (Si-NC);

D O I：

10.1109/LED.2008.2002944

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss).

引用

页码：1148 / 1151

页数：4

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