Fabrication of nano-sized resist patterns on flexible plastic film using thermal curing nano-imprint lithography

被引:56
作者
Lee, H
Hong, S
Yang, K
Choi, K
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Korea Inst Nucl Safety, Taejon, South Korea
关键词
flexible substrate; transparent polymer film; PET (polyethylene-terephthalate) film; hot embossing nano-imprinting lithography; monomer based imprinting lithography; benzyl-methacrylate monomer; thermal initiator; polymerization;
D O I
10.1016/j.mee.2005.09.006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to polymer's excellent flexibility, transparency, reliability and light weight, it is a good candidate material for substrate of devices including organic electronic devices, biomedical devices, and flexible displays (LCD and OLED). In order to build such devices on polymer, nano- to micron-sized patterning must be accomplished. Since polymer materials reacts with organic solvents or developer solutions which are inevitably used in photolithography and cannot bear high temperature (similar to 140 degrees C process for photoresist baking, conventional photolithography cannot be used to polymer substrate. In this research, monomer based thermal curing imprinting lithography was used to make as small as 100 nm dense line and space patterns on flexible PET (polyethylene-terephthalate) film. Compared to hot embossing lithography, monomer based thermal curing imprint lithography uses monomer based imprint resin which consists of base monomer and thermal initiator. Since it is liquid phase at room temperature and polymerization can be initiated at 85 degrees C, which is much lower than glass temperature of polymer resin, the pattern transfer can be done at much lower temperature and pressure. Hence, patterns as small as 100 nm were successfully fabricated on flexible PET film substrate by monomer based thermal curing imprinting lithography at 85 degrees C and 5 atm without any noticeable degradation of PET substrate. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:323 / 327
页数:5
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