Electrical characterization of thermoelectric generators based on p-type Bi0.4Sb1.6Se2.4Te0.6 and n-type Bi2Se0.6Te2.4 bulk thermoelectric materials

被引:17
作者
Kadhim, A. [1 ,2 ]
Hmood, A. [1 ,2 ]
Abu Hassan, H. [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Usm 11800, Penang, Malaysia
[2] Univ Basrah, Coll Sci, Dept Phys, Basrah, Iraq
关键词
Contacts; Semiconductors; Powder technology; Solidification; MICROWAVE; BISMUTH;
D O I
10.1016/j.matlet.2013.01.108
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we fabricated two thermoelectric (TE) generation (TEG) devices based on p-Bi0.4Sb1.6Se2.4Te0.6 and n-Bi2Se0.6Te2.4 bulk TE materials. The overall dimensions of these devices, which comprise 9 (D-1)-and 18(D-2)-couples of legs connected and attached to alumina substrates by Ag paste-Cu plate-Ag paste electrodes, are 50 mm x 25 mm and 50 mm x 50 mm, respectively. The open-circuit voltage (V-oc) and the maximum output power (P-max) were estimated in terms of the temperature difference (Delta T) between hot (T-H) and cold (T-C) junctions as well as the number of p-n couples of the TEG devices. The significance of the resistances, including the internal resistance (R-in) and contact resistance (R-c) between legs and electrodes, are discussed. P-max obtained with the D-2 device was 273 mW under thermal conditions of T-H=523 K and Delta T=184 K. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:24 / 26
页数:3
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