ZnO/GaAs heterojunction solar cells fabricated by the ALD method

被引：17

作者：

Caban, P. ^{[1
]}

Pietruszka, R. ^{[1
]}

Kopalko, K. ^{[1
]}

Witkowski, B. S. ^{[1
]}

Gwozdz, K. ^{[2
]}

Placzek-Popko, E. ^{[2
]}

Godlewski, M. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Quantum Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

来源：

OPTIK | 2018年 / 157卷

关键词：

ZnO/GaAs; AZO/GaAs; Zinc oxide; Gallium arsenide; ALD; Heterojunction; Solar cells; SHOCKLEY-QUEISSER LIMIT; ATOMIC LAYER DEPOSITION; ZINC-OXIDE; UV FILTER; ZNO; NANOPARTICLES; EFFICIENCY; CONTACTS; FILMS; GAAS;

D O I：

10.1016/j.ijleo.2017.11.063

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Zinc oxide is nowadays widely investigated in many different science areas. In particular, this wide band gap semiconductor is valued due to its possible use in transparent electronics as TCO (Transparent Conductive Oxide) and/or as ARC (Antireflective Coating). In other applications, ZnO can also play active role in light source devices, UV detectors, solar cells, etc. In this experiment we focused on zinc oxide applicability assessment in solar cell devices. ZnO as well as its Al-doped form AZO (Aluminum doped Zinc Oxide) were examined in view of their use both as TCO and the n-type partner for the p-type gallium arsenide (GaAs) substrate, that resulted in creation of the p-n heterojunction-based photovoltaic device. In order to deposit both ZnO as well as AZO layers, the ALD (Atomic Layer Deposition) method was applied. (C) 2017 Elsevier GmbH. All rights reserved.

引用

页码：743 / 749

页数：7

共 29 条

[1] An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO [J].

Biswas, Pranab ;

Nath, Palash ;

Sanyal, Dirtha ;

Banerji, P. .

CURRENT APPLIED PHYSICS, 2015, 15 (10) :1256-1261

[2]

Bojarowicz H, 2014, Czesc I Filtry UV oraz ich w+asciwosci Probl Hig Epidemiol, V95, P596

[3] TOXICOLOGY OF GALLIUM-ARSENIDE - AN APPRAISAL [J].

FLORA, SJS ;

DASGUPTA, S .

DEFENCE SCIENCE JOURNAL, 1994, 44 (01) :5-10

[4] Commonly used UV filter toxicity on biological functions: review of last decade studies [J].

Gilbert, E. ;

Pirot, F. ;

Bertholle, V. ;

Roussel, L. ;

Falson, F. ;

Padois, K. .

INTERNATIONAL JOURNAL OF COSMETIC SCIENCE, 2013, 35 (03) :208-219

[5] Zinc oxide as an active n-layer and antireflection coating for silicon based heterojunction solar cell [J].

Hussain, Babar ;

Ebong, Abasifreke ;

Ferguson, Ian .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2015, 139 :95-100

[6] Contacts to ZnO [J].

Ip, K ;

Thaler, GT ;

Yang, HS ;

Han, SY ;

Li, YJ ;

Norton, DP ;

Pearton, SJ ;

Jang, SW ;

Ren, F .

JOURNAL OF CRYSTAL GROWTH, 2006, 287 (01) :149-156

[7] Fundamentals of zinc oxide as a semiconductor [J].

Janotti, Anderson ;

Van de Walle, Chris G. .

REPORTS ON PROGRESS IN PHYSICS, 2009, 72 (12)

[8] Risk assessment of zinc oxide, a cosmetic ingredient used as a UV filter of sunscreens [J].

Kim, Kyu-Bong ;

Kim, Young Woo ;

Lim, Seong Kwang ;

Roh, Tae Hyun ;

Bang, Du Yeon ;

Choi, Seul Min ;

Lim, Duck Soo ;

Kim, Yeon Joo ;

Baek, Seol-Hwa ;

Kim, Min-Kook ;

Seo, Hyo-Seon ;

Kim, Min-Hwa ;

Kim, Hyung Sik ;

Lee, Joo Young ;

Kacew, Sam ;

Lee, Byung-Mu .

JOURNAL OF TOXICOLOGY AND ENVIRONMENTAL HEALTH-PART B-CRITICAL REVIEWS, 2017, 20 (03) :155-182

[9] Radiation hardness of single-crystalline zinc oxide films [J].

Koike, Kazuto ;

Aoki, Takahiro ;

Fujimoto, Ryugo ;

Sasa, Shigehiko ;

Yano, Mitsuaki ;

Gonda, Shun-ichi ;

Ishigami, Ryoya ;

Kume, Kyo .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07) :1577-1579

[10] Role of growth temperature on the structural, optical and electrical properties of ZnO thin films [J].

Kumar, Ashish ;

Kumar, Parmod ;

Kumar, Kaushal ;

Singh, Trilok ;

Singh, R. ;

Asokan, K. ;

Kanjilal, D. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 649 :1205-1209

← 1 2 3 →