Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

被引：191

作者：

Gundlach, DJ ^{[1
]}

Jia, LL

Jackson, TN

机构：

[1] Penn State Univ, Ctr Thin Film Devices & Elect Mat, University Pk, PA 16801 USA

[2] Penn State Univ, Dept Elect Engn, Proc Res Lab, University Pk, PA 16801 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 12期

关键词：

flat panel displays; molecular electronics; thin film transistors;

D O I：

10.1109/55.974580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated pentacene active layer organic thin film transistors (OTFTs) using chemically-modified source and drain contacts with improved contact and linear region characteristics. OTFTs fabricated on heavily doped, thermally oxidized single-crystal silicon substrates have linear field-effect mobility greater than 0.5 cm(2)/V-s at a drain-source voltage of -0.1 V, on/off current ratio greater than 10(7), and subthreshold slope as low as 0.7 V/decade.

引用

页码：571 / 573

页数：3

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