GMR versus interfacial roughness induced from different buffers in (Co/Cu) ML

被引:8
作者
El Harfaoui, M
Le Gall, H [1 ]
Ben Youssef, J
Pogossian, S
Thiaville, A
Gogol, P
Qachaou, A
Desvignes, JM
机构
[1] CNRS, LPSB, Grp Magnetisme, F-92190 Meudon, France
[2] LPMC, Fac Sci Ibn Tofail, Kenitra, Morocco
[3] Univ Orsay, CNRS, LPS, F-91405 Orsay, France
关键词
metallic multilayers; interfacial roughness; texture; GMR; buffer layer;
D O I
10.1016/S0304-8853(98)00639-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The correlation between the giant magnetoresistance Delta R/R, at the first maximum of the oscillating thickness dependence of the magnetoresistance (MR), and the structural and magnetic parameters has been investigated in (Co/Cu) multilayers (ML) deposited by the unusual RF sputtering method. Different textures and interface roughnesses have been induced from magnetic (Fe, Co) and non-magnetic (Cu, Al, Ta, Cr) buffers. The MR is independent of the ML texture and grain size but presents a strong correlation with the interface as deduced from small and large angle XRD and AFM. In high roughness ML the evolution, under increasing applied field, of Delta R/R versus (M/M(s))(2) presents a strong deviation from a standard linear dependence. Such a deviation is attributed to the presence of Co granules in the Cu or/and the buffer matrices when strong interface disorder is induced in the samples. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码:107 / 109
页数:3
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