Design and Realization of a X-band Graphene Amplifier MMIC

被引：0

作者：

Song, Xubo ^{[1
]}

Yu, Cui ^{[1
]}

He, Zezhao ^{[1
]}

Liu, Qingbin ^{[1
]}

Han, Tingting ^{[1
]}

Dun, Shaobo ^{[1
]}

Lv, Yuanjie ^{[1
]}

Cai, Shujun ^{[1
]}

Feng, Zhihong ^{[1
]}

机构：

[1] Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China

来源：

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2017年

关键词：

TRANSISTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we present a graphene amplifier Monolithic Microwave Integrated Circuit (MMIC) operating at X-Band. The graphene field effect transistor (FET) was fabricated on quasi-free-standing bilayer epitaxial graphene on SiC (0001) substrate by a self-aligned fabrication procedure. The small-signal equivalent circuit model of 2 x 15 mu m graphene FET with 200 nm T-gates was deduced from the measured small-signal S-parameters. The modeled S-parameters show good agreement with experiments from 1 GHz to 20 GHz. Based on the model, the X-band amplifier MMIC was designed and fabricated with independent bias component and impedance matching network composing of inductance and transmission line. A small-signal gain of 2.6 dB and a noise figure of 6.1 dB were achieved in the fabricated amplifier.

引用

页码：694 / 697

页数：4

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