Weak anti-localization in the accumulation layer of InSb/GaAs (100) hetero interface

被引：0
作者：
Ishida, Shuichi [1 ]
Takeda, Keiki [1 ]
Okamoto, Atsushi [2 ]
Shibasaki, Ichiro [2 ]
机构：
[1] Tokyo Univ Sci, Fac Sci & Engn, Yamaguchi 7560884, Japan
[2] Asahi Chem Ind Co Ltd, Shizuoka 4168501, Japan
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2003年 / 72卷
关键词：
InSb films on GaAs; accumulation layer; magnetoresistance; weak anti-localization; spin-orbit interaction; spin-Zeeman effect;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页数：2
相关论文
共 13 条
  • [1] CHEN DL, 1993, PHYS REV B, V47, P4084
  • [2] OBSERVATION OF SPIN PRECESSION IN GAAS INVERSION-LAYERS USING ANTILOCALIZATION
    DRESSELHAUS, PD
    PAPAVASSILIOU, CMA
    WHEELER, RG
    SACKS, RN
    [J]. PHYSICAL REVIEW LETTERS, 1992, 68 (01) : 106 - 109
  • [3] FUJOMOTO A, 2001, P 10 INT C NARR GAP, P236
  • [4] HEREMANS J, 1996, J APPL PHYS LETT, V74, P215
  • [5] ELECTRON SPIN RESONANCE IN N-TYPE INSB
    ISAACSON, RA
    [J]. PHYSICAL REVIEW, 1968, 169 (02): : 312 - &
  • [6] KOBAYASHI S, 1985, PROGR THEORETICAL S, V84, P224
  • [7] Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry
    Koga, T
    Nitta, J
    Akazaki, T
    Takayanagi, H
    [J]. PHYSICAL REVIEW LETTERS, 2002, 89 (04) : 1 - 046801
  • [8] EFFECTS OF ZEEMAN SPLITTING ON WEAK ANTILOCALIZATION
    KOWAL, D
    BENCHORIN, M
    OVADYAHU, Z
    [J]. PHYSICAL REVIEW B, 1991, 44 (16): : 9080 - 9083
  • [9] MAGNETORESISTANCE IN TWO-DIMENSIONAL DISORDERED-SYSTEMS - EFFECTS OF ZEEMAN SPLITTING AND SPIN-ORBIT SCATTERING
    MAEKAWA, S
    FUKUYAMA, H
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (08) : 2516 - 2524
  • [10] EFFECTS OF THE ANDERSON LOCALIZATION ON MAGNETOCONDUCTIVITY IN METALLIC N-INSB AND N-GAAS
    MORITA, S
    MIKOSHIBA, N
    KOIKE, Y
    FUKASE, T
    ISHIDA, S
    KITAGAWA, M
    [J]. SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 113 - 119
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