Influence of nanoparticle doping on electronic properties of MgB2 bulk samples

被引:3
作者
Gozzelino, L. [1 ]
Gerbaldo, R. [1 ]
Ghigo, G. [1 ]
Laviano, F. [1 ]
Lopardo, G. [1 ]
Mezzetti, E. [1 ]
Ummarino, G. A. [1 ]
Giunchi, G. [1 ]
Perini, E. [1 ]
Saglietti, L. [1 ]
Bassani, E. [1 ]
Minetti, B. [1 ]
机构
[1] Politecn Torino, Dept Phys, Cso Duca Abruzzi 24, I-10129 Turin, Italy
来源
9TH EUROPEAN CONFERENCE ON APPLIED SUPERCONDUCTIVITY (EUCAS 09) | 2010年 / 234卷
关键词
UPPER CRITICAL-FIELD; CRITICAL-CURRENT DENSITIES; TRANSPORT-PROPERTIES; CRITICAL-TEMPERATURE; DOPED MGB2; SUPERCONDUCTORS; CARBON; INFILTRATION; ENHANCEMENT; DEPENDENCE;
D O I
10.1088/1742-6596/234/1/012014
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Superconducting and normal-state properties of MgB2 polycrystalline samples with non magnetic (SiC) and magnetic (Co) dopant addition were analysed in order to study the doping influence on the magnetic anistropy of MgB2 polycrystalline samples and to correlate this influence with the doping-induced changes in band scattering processes. Both doping typologies result in a decease of the MgB2 upper critical field (B-c2) shift toward higher temperatures whereas Co doped samples exhibit a B-c2 decrease. To guide the application road map a theoretical approach to the analysis of the normal state resistivities (SiC doping) and of the upper critical field dependence on temperature (SiC and Co dopings) was performed. According to this scenario, band scattering rate as well as electron diffusivity values obtained by these analyses showed for both the investigated doping typologies an increase of intraband scattering processes in the more anisotropic sigma band whereas the conductivity or pi band remains almost unaffected.
引用
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页数:12
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