Fast and scalable memory characteristics of Ge-doped SbTe phase change materials

被引：16

作者：

Cheong, Byung-ki ^{[1
]}

Lee, Suyoun ^{[1
]}

Jeong, Jeung-hyun ^{[1
]}

Park, Sohee ^{[2
]}

Han, Seungwu ^{[2
]}

Wu, Zhe ^{[3
]}

Ahn, Dong-Ho ^{[3
]}

机构：

[1] Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea

[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[3] Samsung Elect, Proc Dev Team, Semicond R&D Ctr, Gyeonggi Do 445701, South Korea

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2012年 / 249卷 / 10期

关键词：

Ge-doped SbTe; phase change memory; scalability; SET speed; storage class memory; TE; GROWTH; FILMS; PRAM;

D O I：

10.1002/pssb.201200419

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Phase change memory (PCM) has opportunities of various applications on the premise of its high performance operations, which are still to develop with innovations such as change of a memory material. In respects of high-speed and high-scalability memory characteristics, d-phase Ge-doped SbTe (GeST) materials stand as highly promising candidates. An overview of the material and device characteristics of these materials is presented primarily based on our recent experimental and computational studies and with a particular regard to their Sb-to-Te ratio (STR) dependence. TEM images of the d-phase GeST microstructures of varying STR and a highly scaled PCM cell with a d-phase GeST of high STR.

引用

页码：1985 / 1991

页数：7

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