Tunable dual-band terahertz absorber with all-dielectric configuration based on graphene

被引:63
作者
Cai, Yijun [1 ,2 ]
Guo, Yongbo [3 ]
Zhou, Yuanguo [3 ]
Huang, Xindong [1 ]
Yang, Guoqing [4 ]
Zhu, Jinfeng [5 ,6 ]
机构
[1] Xiamen Univ Technol, Fujian Prov Key Lab Optoelect Technol & Devices, Xiamen 361024, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100191, Peoples R China
[3] Xian Univ Sci & Technol, Coll Commun & Informat Engn, Xian 710054, Peoples R China
[4] Hangzhou Dianzi Univ, Coll Elect & Informat, Hangzhou 310018, Peoples R China
[5] Xiamen Univ, Inst Electromagnet & Acoust, Xiamen 361005, Peoples R China
[6] Xiamen Univ, Key Lab Electromagnet Wave Sci & Detect Technol, Xiamen 361005, Peoples R China
基金
中国国家自然科学基金;
关键词
BROAD-BAND; WIDE-ANGLE; METAMATERIAL; ABSORPTION; DESIGN; REGIME; LAYER;
D O I
10.1364/OE.409205
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we theoretically design a dual-band graphene-based terahertz (THz) absorber combining the magnetic resonance with a THz cold mirror without any metallic loss. The absorption spectrum of the all-dielectric THz absorber can be actively manipulated after fabrication due to the tunable conductivity of graphene. After delicate optimization, two ultra-narrow absorption peaks are achieved with respective full width at half maximum (FWHM) of 0.0272 THz and 0.0424 THz. Also, we investigate the effect of geometric parameters on the absorption performance. Coupled mode theory (CMT) is conducted on the dual-band spectrum as an analytic method to confirm the validity of numerical results. Furthermore, physical mechanism is deeply revealed with magnetic and electric field distributions, which demonstrate a totally different principle with traditional plasmonic absorber. Our research provides a significant design guide for developing tunable multi-resonant THz devices based on all-dielectric configuration. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:31524 / 31534
页数:11
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