Strong coupling in a single quantum dot semiconductor microcavity system

被引：1

作者：

Reitzenstein, S. ^{[1
]}

Sek, G. ^{[1
]}

Loeffler, A. ^{[1
]}

Hofmann, C. ^{[1
]}

Kuhn, S. ^{[1
]}

Reithmaier, J. P. ^{[1
]}

Keldysh, L. V. ^{[1
]}

Kulakovskii, V. D. ^{[1
]}

Reinecke, T. L. ^{[1
]}

Forchel, A. ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XIV | 2006年 / 6115卷

关键词：

quantum dot; microcavity; strong coupling;

D O I：

10.1117/12.661393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Properties of atom-like emitters in cavities are successfully described by cavity quantum electrodynamics (cQED). We report on cavity quantum electrodynamics (cQED) experiments in a single quantum dot semiconductor system. CQED, which is a very active research field in optics and solid state physics, can be divided into a weak and a strong coupling regime. In case of weak coupling, the spontaneous emission rate of an atom-like emitter, e.g. a single quantum dot exciton, can be enhanced or reduced compared to the value in vacuum in an irreversible emission process. In contrast, a reversible energy exchange between the emitter and the cavity mode takes place when the conditions for strong coupling are fulfilled. We investigate weak as well as strong coupling in a system based on a low density In0.3Ga0.7As quantum dot layer placed as the active layer in a high quality planar AlAs/GaAs distributed Bragg reflector cavity grown by molecular beam epitaxy. Using electron beam lithography and deep plasma etching, micropillars with high Q-factors (up to 43.000 for 4 mu m diameter) were realized from the planar cavity structure. Due to the high oscillator strength of the In0.3Ga0.7As quantum dots together with a small mode volume in high finesse micropillar cavities it is possible to observe strong coupling characterized by a vacuum Rabi splitting of 140 mu eV. The fabrication of high-Q micropillar cavities as well as conditions necessary to realize strong coupling in the present system are discussed in detail.

引用

页数：8

共 15 条

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