Perovskite oxides as transparent semiconductors: a review

被引：24

作者：

He, Haiying ^{[1
]}

Yang, Zhihao ^{[1
]}

Xu, Yonghang ^{[1
]}

Smith, Andrew T. ^{[2
,3
]}

Yang, Guangguang ^{[4
]}

Sun, Luyi ^{[2
,3
]}

机构：

[1] Foshan Univ, Sch Mat Sci & Hydrogen Energy, Foshan 528000, Peoples R China

[2] Univ Connecticut, Inst Mat Sci, Polymer Program, Storrs, CT 06269 USA

[3] Univ Connecticut, Dept Chem & Biomol Engn, Storrs, CT 06269 USA

[4] Foshan Univ, Sch Elect Informat Engn, Foshan 528000, Peoples R China

来源：

NANO CONVERGENCE | 2020年 / 7卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Perovskite oxide; Transparent conducting oxide; SrVO3; BaSnO3; Semiconductor; P-TYPE SEMICONDUCTOR; OPTICAL-PROPERTIES; THIN-FILMS; DOPED SRTIO3; ROOM-TEMPERATURE; CONDUCTING OXIDES; ELECTRON-MOBILITY; BASNO3; FABRICATION; STABILITY;

D O I：

10.1186/s40580-020-00242-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Traditional transparent conducting oxides (TCOs) have been widely used for various optoelectronic applications, but have the trade-off between conductivity and transmittance. Recently, perovskite oxides, with structural and chemical stability, have exhibited excellent physical properties as new TCOs. We focus on SrVO3-based perovskites with a high carrier concentration and BaSnO3-based perovskites with a high mobility for n-type TCOs. In addition, p-type perovskites are discussed, which can serve as potential future options to couple with n-type perovskites to design full perovskite based devices.

引用

页数：10

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