Lateral quantum dots in Si/SiGe realized by a Schottky split-gate technique

被引：32

作者：

Berer, T ^{[1
]}

Pachinger, D ^{[1
]}

Pillwein, G ^{[1
]}

Mühlberger, M ^{[1
]}

Lichtenberger, H ^{[1
]}

Brunthaler, G ^{[1
]}

Schäffler, F ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 16期

基金：

奥地利科学基金会;

关键词：

D O I：

10.1063/1.2197320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lateral quantum dots are formed in the two-dimensional electron gases of a high-mobility Si/SiGe heterostructures by means of split Schottky gates. Palladium gates, defined by e-beam lithography and lift-off, show Schottky barriers with very well controlled leakage currents. At low temperatures we observe Coulomb-blockade and stability diamonds on lateral quantum dots containing a total charge of about 25 electrons. The experiments demonstrate that, in contrast to recent reports, Schottky gates are a feasible approach for the fabrication and integration of single electron transistors in the strained Si/SiGe heterosystem. (c) 2006 American Institute of Physics.

引用

页数：3

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