Room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers fabricated using epitaxial lateral overgrowth

被引：85

作者：

Izumi, Shouichiro ^{[1
]}

Fuutagawa, Noriyuki ^{[1
]}

Hamaguchi, Tatsushi ^{[1
]}

Murayama, Masahiro ^{[1
]}

Kuramoto, Masaru ^{[1
]}

Narui, Hironobu ^{[1
]}

机构：

[1] Sony Corp, Compound Semicond Dev Dept, Semicond Device Dev Div, Atsugi, Kanagawa 2430014, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 06期

关键词：

DIODES;

D O I：

10.7567/APEX.8.062702

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have successfully demonstrated the room-temperature continuous-wave operation of GaN-based vertical-cavity surface-emitting lasers (VCSELs) with all-dielectric reflectors, which were fabricated using epitaxial lateral overgrowth. The VCSELs exhibited a threshold current of 8 mA and a threshold voltage of 4.5 V at a lasing wavelength of 446 nm. The maximum output power was 0.9 mW for an 8-mu m-diameter current aperture, which was made possible because of the high thermal conductivity of the GaN substrate. (C) 2015 The Japan Society of Applied Physics

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